Description

The GCME GIR addresses the use of electrical characterization tools to assess multicrystalline silicon substrates used in the manufacture of photovoltaic solar cells. Based on the hypothesis that the cause of quantum efficiency losses lies in the existence of defects in the silicon substrate, we can construct efficiency and defect distribution maps of solar cells built on silicon substrates. To obtain these defect maps, we can use the group’s original technique—capacitance-voltage transient technique (CVTT)—previously tested on other electronic structures and devices. In this line, we also perform silicon substrates studies that have been hyperdoped with deep centers, with the aim of forming an intermediate band within the silicon gap. In this way, photons whose energy was less than the gap of the silicon could generate electron-hole pairs, so the efficiency of a solar cell made of this material would be increased. The formation of this intermediate band to manufacture infrared detectors based on silicon is also interesting. In this line of research, the following work should be highlighted: Cualificación de sustratos de silicio multicristalino para células solares (2011-2013) [qualification of multicrystalline silicon substrates for solar cells], project funded by the Department of Education of the Regional Government of Castilla y León.

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