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CYTUVA

Patent: Anodized Ta2O5 MOS gate dielectric

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Contact Information

Basic Information

  • UniversityUniversidad de Valladolid
  • Center
  • DepartmentElectricity and electronic
  • Investigation GroupElectronic materials and devices characterization group (GCME)


Description

Anodized Ta205 MOS gate dielectric. (Patent)


Other information

Number of researchers:

3

Development status:

Commercialized or in the market

Intellectual Property Rights:

Patent

Differentiation in the market:

Novelty

Applicability of technology:

Yes

Companies and markets:

Owning body: Lucent Technologies, Bell Laboratories Country of priority: United States of America

Additional Information:

Date: 1998

UNESCO Code:

3307 - Electronic technology

Other members:

P.A. Sullivan
R.R. Kola

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