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Description
Inside the chamber there is a melting pot whose basis rests on a high thermal conductivity graphite block. Under the action of a cylindrical heater, the silicon load contained in the melting pot is melted and later cooled through the conductor block below when it is in contact with a cold surface. This way, a directional solidification is achieved depending on the normal direction to the melting pot basis. The thermal gradient is controlled during the solidification process by shifting the side insulation shield, the heat exchanger plate or both, as well as regulating the power applied to the resistive element heater. The possibility of combining different movements provides higher control over the gradient of temperatures and, therefore, over the quality of the final product.Other information
Number of researchers:
2
Development status:
Developed but not marketed
Intellectual Property Rights:
Patent
Differentiation in the market:
Quality
Applicability of technology:
Yes
Companies and markets:
Telecommunication companies and those with departments developing new semiconductor materials.
Advantages:
The main objective of this invention is to offer a crystallization chamber that combines the two technologies industrially used in directional solidification: Directional Solidification System (DSS) and Heat Exchange Method (HEM). The user can choose using them separatedly or simultaneously. Its second objective is to improve the quality of the wafers obtained from polycrystalline material. Therefore, by combining both DSS and HEM technologies, we seek to optimize the control over the gradient of temperatures during crytallization and to increase the quality of the final product.
UNESCO Code:
2211 - Solid state physics
Other members:
Óscar Martínez Sacristán
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