Description

In this line, GIR GCME deals with the study of the phenomenon called resistive switching, which certain materials display and consists of an external electrical signal that can make them pass from a state of high current (conduction) to a state of very low current (cutting), creating or eliminating ionic filaments between two electrodes. These materials may be used to produce a new generation of memories (resistive memories). Although resistive switching phenomena have been observed in various metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures, many questions arise about the origin of conduction mechanisms and resistive switching. Therefore, before addressing the commercial use of RRAMs it is necessary to resolve some essential aspects. One of the most important aspects is the existence of fluctuations in the different resistive states, which are responsible for the variability between cycles and between devices. The study of high permittivity oxides is currently being carried out on titanium oxides doped with holmium oxides and on hafnium oxides. A short-term objective is to study this phenomenon at different temperatures, from the temperature of liquid nitrogen (77 K) to temperatures above ambient temperature.

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