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Description
Characterization by original GIR (official research group in its Spanish acronym) techniques of the so-called "high-permittivity dielectric materials." Some of the works conducted within this research line are the following: “Caracterización eléctrica de estructuras MIS y MIM con dielectricos de alta permitividad para su aplicación en RRAMS y memresistors” (Electrical characterization of MIS and MIM structures using high-permittivity dielectric materials to be used in RRAMS and memresistors) (2015 - 2017), project funded by the Dirección General de Investigación Científica y Técnica (Scientific and Technical Research Directorate-General) of the Spanish Ministry of Economy and Finance. “Fabricación y caracterización de capas de dieléctricos de alta permitividad depositadas por ALD sobre silicio y sobre grafeno” (Production and characterization of high-permittivity dielectric layers deposited by ALD on silicon and graphene) (2012-2015), project funded by the Spanish Ministry of Science and Innovation. ‘Caracterización Eléctrica de Dieléctricos de Alta Permitividad depositados por ALD’ (Electrical characterization of high-permittivity dielectric materials deposited by ALD) (2009-2011), project funded by the Spanish Ministry of Science and Innovation.Other information
Number of researchers:
6
Development status:
In research and development phase
Intellectual Property Rights:
Susceptible de patente
Differentiation in the market:
Novelty
Applicability of technology:
Yes
Companies and markets:
Manufacturers of integrated circuits.
Advantages:
High-permittivity dielectric materials are innovative materials that behave as suitable insulators for the production of integrated circuits, improving their performance and reducing their size. Therefore, they will facilitate the production of faster, smaller and lighter devices and electronic systems.
Additional Information:
It actively collaborates with the following research groups: the Barcelona Microelectronics Institute of the National Microelectronics Centre-CSIC. University of Helsinki (Finland). Atomic Layer Deposition - Finnish Centre of Excellence. University of Tartu (Estonia). Complutense University of Madrid. Autonomous University of Barcelona. University of Granada.
UNESCO Code:
3307 - Electronic technology
Other members:
Salvador Dueñas Carazo
Héctor García García
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César Vaca Rodríguez
Óscar González Ossorio
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